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BU808DFX Datasheet HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON TRANSISTOR

Manufacturer: STMicroelectronics

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General Description

The BU808DFX is a NPN transistor in monolithic Darlington configuration.

It is manufactured using Multiepitaxial Mesa technology for cost-effective high performance.

ISOWATT218FX INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB I BM P tot V isol T stg Tj April 2007 Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to Exernal Heatsink Storage Temperature Max.

Overview

www.DataSheet4U.com BU808DFX HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON TRANSISTOR s s s s s s s STMicroelectronics PREFERRED SALESTYPE NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE HIGH VOLTAGE CAPABILITY (> 1400 V) HIGH DC CURRENT GAIN (TYP.

150) FULLY INSULATED PACKAGE (U.L.

COMPLIANT) FOR EASY MOUNTING LOW BASE-DRIVE REQUIREMENTS DEDICATED APPLICATION NOTE AN1184 1 3 2 s APPLICATIONS COST EFFECTIVE SOLUTION FOR HORIZONTAL DEFLECTION IN LOW END TV UP TO 21 INCHES.

Key Features

  • set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.

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