Datasheet Details
| Part number | BUH513 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 96.37 KB |
| Description | High Voltage Fast Switching NPN Power Transistor |
| Datasheet | BUH513_STMicroelectronics.pdf |
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Overview: BUH513 HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE s HIGH VOLTAGE CAPABILITY s U.L. RECOGNISED ISOWATT218 PACKAGE (U.L.
| Part number | BUH513 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 96.37 KB |
| Description | High Voltage Fast Switching NPN Power Transistor |
| Datasheet | BUH513_STMicroelectronics.pdf |
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The BUH series is designed for use in horizontal deflection circuits in televisions and monitors.
3 2 1 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS S ymb ol V CBO V CEO VEBO IC ICM IB IBM Ptot Tstg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) T otal Dissipat ion at Tc = 25 oC Storage Temperature Max.
O perating Junction Temperature June 1996 V alu e 1300 700 10 8 12 5 8 50 -65 to 150 150 Unit V V V A A A A W oC oC 1/7 BUH513 THERMAL DATA Rthj-ca se Thermal Resistance Junction-case Max 2 .5 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol ICES IEBO VCEO(s us) VEBO VCE(sat)∗ VBE(sat )∗ hFE∗ ts tf ts tf Parameter Collector Cut-off Current (VBE = 0) Emitter Cut- off Current (IC = 0) Col lec t or-E mit t er Sustaining Voltage Emitter-Base Voltage (IC = 0) Col lec t or-E mit t er Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain RESISTIVE LOAD Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time T est Con ditio ns VCE = 1300 V VCE = 1300 V Tj = 125 oC VEB = 5 V IC = 100 mA IE = 10 mA IC = 5 A IB = 1.25 A IC = 5 A IB = 1.25 A IC = 5 A VCE = 5 V IC = 5 A VCE = 5 V Tj = 100 oC VCC = 400 V IC = 5 A IB1 = 1.25 A IB2 = 2.5 A IC = 5 A f = 15625 Hz IB1 = 1.25 A IB2 = -2.5 A Vcef ly back = 1050 sin π 10 106 t V Min.
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