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BUL705 Datasheet High voltage fast-switching NPN Power Transistor

Manufacturer: STMicroelectronics

General Description

The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

Internal schematic diagram Applications ■ ■ Electronic ballast for fluorescent lighting Dedicated for PFC solution in HF ballast halfbridge voltage fed Order codes Part Number BUL705 Marking BUL705 Package TO-220 Packing Tube May 2006 Rev 1 1/11 www.st.com 11 BUL705 Contents 1 2 Electrical ratings .

Overview

BUL705 High voltage fast-switching NPN Power Transistor General.

Key Features

  • NPN Transistor High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Fully characterized at 125 °C In compliance with the 2002/93/EC European Directive 1 2 3 TO-220.