CB45000
Description
The CB45000 standard cell series uses a high performance, low voltage, 5 level metal, HCMOS6 0.35 micron process to achieve subnanosecond internal speeds while offering very low power dissipation and high noise immunity.
Key Features
- Generators to support Single Port RAM, Dual Port RAM, and ROM with BIST options
- Fully independent power and ground configurations for inputs, core and outputs
- I/O ring capability up to 1000 pads
- Latchup trigger current > +/- 500 mA
- ESD protection > +/- 4000 volts typical value s s s s s Oscillators for wide frequency spectrum
- Broad range of 500+ SSI cells Design For Test features including IEEE 1149.1 JTAG Boundary Scan architecture
- Cadence, Mentor and Synopsys based design systems with interfaces from multiple workstations
- Broad ceramic and plastic package range
