CB45000 Datasheet - STMicroelectronics

HCMOS6 STANDARD CELLS

CB45000 Features

* s s s s s s s s s s s 0.35 micron 5 layer metal HCMOS6 process, retrograde well technology, low resistance salicided active areas and polysilicide gates. 3.3 V optimized transistor with 5 V I/O interface capability 2 - input NAND delay of 160 ps (typ) with fanout = 2. Broad I/O functionality in

CB45000 General Description

The CB45000 standard cell series uses a high performance, low voltage, 5 level metal, HCMOS6 0.35 micron process to achieve subnanosecond internal speeds while offering very low power dissipation and high noise immunity. With an average routed logic density of 14000 gates/mm2, the CB45000 family all.

CB45000 Datasheet (265.97 KB)