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CB45000 - HCMOS6 STANDARD CELLS

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General Description

The CB45000 standard cell series uses a high performance, low voltage, 5 level metal, HCMOS6 0.35 micron process to achieve subnanosecond internal speeds while offering very low power dissipation and high noise immunity.

With an average routed logic density of 14000 gates/mm2, the CB45000 family allows the design of highly complex devices.

The potential ava

Overview

® CB45000 SERIES HCMOS6 STANDARD CELLS.

Key Features

  • s s s s s s s s s s s 0.35 micron 5 layer metal HCMOS6 process, retrograde well technology, low resistance salicided active areas and polysilicide gates. 3.3 V optimized transistor with 5 V I/O interface capability 2 - input NAND delay of 160 ps (typ) with fanout = 2. Broad I/O functionality including Low Voltage CMOS, Low Voltage TTL and LVDS. Driving capability to ISA, EISA, PCI, MCA, and SCSI interface levels High drive I/O; capability of sinking up to 24 mA with slew rate control, curre.

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