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STD17N05 STD17N06
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE STD17N05 STD17N06
VDSS 50 V 60 V
R DS( on) < 0.085 Ω < 0.085 Ω
ID 17 A 17 A
s TYPICAL RDS(on) = 0.06 Ω s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW GATE CHARGE s HIGH CURRENT CAPABILITY s 175oC OPERATING TEMPERATURE s APPLICATION ORIENTED
CHARACTERIZATION s THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”) s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”)
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.
D17N06 Datasheet
