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D3NB50 Datasheet - STMicroelectronics

STD3NB50

D3NB50 General Description

Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avala.

D3NB50 Datasheet (91.37 KB)

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Datasheet Details

Part number:

D3NB50

Manufacturer:

STMicroelectronics ↗

File Size:

91.37 KB

Description:

Std3nb50.
STD3NB50 N - CHANNEL 500V - 2.5Ω - 3A - IPAK/DPAK PowerMESH™ MOSFET PRELIMINARY DATA TYPE STD3NB50 s s s s s V DSS 500 V R DS(on) < 2.8 Ω ID 3A TY.

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