900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




STMicroelectronics Electronic Components Datasheet

D3NB50 Datasheet

STD3NB50

No Preview Available !

STD3NB50
TYPE
STD3NB50
N - CHANNEL 500V - 2.5- 3A - IPAK/DPAK
PowerMESHMOSFET
PRELIMINARY DATA
VDSS
500 V
RDS(on)
< 2.8
ID
3A
s TYPICAL RDS(on) = 2.5
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
IPAK
TO-251
(Suffix "-1")
3
23
1
1
DPAK
TO-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
www.DataSheet4U.com
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
500 V
VDGR
VGS
ID
ID
IDM()
Ptot
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
500
± 30
3
1.9
12
50
0.4
V
V
A
A
A
W
W/oC
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
4.5
-65 to 150
150
(1) ISD 3A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
V/ns
oC
oC
May 1998
1/6
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.


STMicroelectronics Electronic Components Datasheet

D3NB50 Datasheet

STD3NB50

No Preview Available !

STD3NB50
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
2.5
100
1.5
275
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value
3
40
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
500
Typ. Max.
1
50
± 100
Unit
V
µA
µA
nA
ON ()
Symbol
Parameter
Test Conditions
VGS(th) Gate Threshold
Voltage
VDS = VGS ID = 250 µA
RDS(on) Static Drain-source On VGS = 10V ID =1.9 A
Resistance
www.DataSheeItD4(Uon.c)om On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
3
Typ.
4
Max.
5
Unit
V
2.5 2.8
3.8 A
DYNAMIC
Symbol
gfs ()
Ciss
C oss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 1.9 A
Min.
2
Typ.
2.3
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
400 520
62 84
7.5 10
pF
pF
pF
2/6


Part Number D3NB50
Description STD3NB50
Maker STMicroelectronics
Total Page 6 Pages
PDF Download

D3NB50 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 D3NB50 STD3NB50
STMicroelectronics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy