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STMicroelectronics Electronic Components Datasheet

D5NM60 Datasheet

STD5NM60

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STD5NM60
STB8NM60 - STP8NM60
N-channel 650 V@Tjmax, 0.9 , 8 A MDmesh™ Power MOSFET
TO-220, TO-220FP, D2PAK, DPAK, IPAK
Features
Type
STD5NM60
STD5NM60-1
STB8NM60
STP8NM60
STP8NM60FP
VDSS
650 V
650 V
650 V
650 V
650 V
RDS(on)
<1
<1
<1
<1
<1
ID
5A
5A
5A
8A
8 A(1)
Pw
96 W
96 W
100 W
100 W
30 W
100% avalanche tested
HIgh dv/dt and avalanche capabilities
Low input capacitance and gate charge
Low gate input resistance
Application
Switching applications
Description
The MDmesh™ is a new revolutionary Power
MOSFET technology that associates the multiple
drain process with the company’s PowerMESH™
horizontal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the company’s proprietary strip
technique yields overall dynamic performance
that is significantly better than that of similar
competition’s products.
3
1
DPAK
3
1
D²PAK
3
2
1
TO-220
3
2
TO-220F1P
3
2
1
IPAK
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STD5NM60-1
STD5NM60T4
STB8NM60T4
STP8NM60
STP8NM60FP
Marking
D5NM60
D5NM60
B8NM60
P8NM60
P8NM60FP
Package
IPAK
DPAK
D²PAK
TO-220
TO-220FP
Packaging
Tube
Tape & reel
Tape & reel
Tube
Tube
October 2008
Rev 17
1/18
www.st.com
18


STMicroelectronics Electronic Components Datasheet

D5NM60 Datasheet

STD5NM60

No Preview Available !

Electrical ratings
1 Electrical ratings
STP8NM60, STD5NM60, STB8NM60
2/18
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID
IDM(2)
Drain current (continuous) at TC=100 °C
Drain current (pulsed)
PTOT
dv/dt(3)
Total dissipation at TC = 25 °C
Derating factor
Peak diode recovery voltage slope
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;TC=25 °C)
TJ Operating junction temperature
Tstg Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD 5 A, di/dt 400 A/µs, VDD = 80%V(BR)DSS
Value
TO-220
IPAK Unit
TO-220FP
D²PAK
DPAK
± 30 V
8 8(1) 5 A
5
5 (1)
3.1 (1) A
32
32 (1)
20 (1)
A
100 30 96 W
0.8 0.24 0.0.4 W/°C
15 V/ns
--
2500
-- V
-55 to 150
°C
Table 2. Thermal resistance
Symbol
Parameter
Rthj-case
Rthj-a
Tl
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Value
TO-220 IPAK
Unit
TO-220FP
D²PAK DPAK
1.25 1.3
4.16 °C/W
62.5 °C/W
300 °C
Table 3. Avalanche data
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAS (pulse width limited by Tj Max)
Single pulse avalanche energy
EAS (starting Tj=25 °C, ID=IAS, VDD=50 V)
Value
2.5
200
Unit
A
mJ


Part Number D5NM60
Description STD5NM60
Maker STMicroelectronics
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D5NM60 Datasheet PDF






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