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DALC208SC6 Datasheet

LOW CAPACITANCE DIODE ARRAY

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®
Application Specific Discretes
A.S.D.TM
DALC208SC6
LOW CAPACITANCE
DIODE ARRAY
MAIN APPLICATIONS
Where ESD and/or over and undershoot protection
for datalines is required :
Sensitive logic input protection
Microprocessor based equipment
Audio / Video inputs
Portable electronics
Networks
ISDN equipment
USB interface
DESCRIPTION
The DALC208SC6 diode array is designed to
protect components which are connected to data
and transmission lines from overvoltages caused
by electrostatic discharge (ESD) or other
transients. It is a rail-to-rail protection device also
suited for overshoot and undershoot suppression
on sensitive logic inputs.
The low capacitance of the DALC208SC6
prevents from significant signal distortion.
1
SOT23-6L (SC74)
FUNCTIONAL DIAGRAM
FEATURES
PROTECTION OF 4 LINES
PEAK REVERSE VOLTAGE:
VRRM = 9 V per diode
VERY LOW CAPACITANCE PER DIODE:
C < 5 pF
VERY LOW LEAKAGE CURRENT: IR < 1 µA
I/O 1
REF 2
I/O 2
I/O 4
REF 1
I/O 3
BENEFITS
Cost-effectiveness compared to discrete solution
High efficiency in ESD suppression
No significant signal distortion thanks to very low
capacitance
High reliability offered by monolithic integration
Lower PCB area consumption versus discrete
solution
COMPLIES WITH THE FOLLOWING STANDARDS :
IEC 1000-4-2
level 4
MIL STD 883C - Method 3015-6
(human body test)
class 3
February 1999 - Ed: 3A
1/10


STMicroelectronics Electronic Components Datasheet

DALC208SC6 Datasheet

LOW CAPACITANCE DIODE ARRAY

No Preview Available !

DALC208SC6
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C).
Symbol
VPP
VRRM
VREF
VIn max.
VIn min.
IF
IFRM
IFSM
Tstg
Tj
Parameter
IEC1000-4-2, air discharge
IEC1000-4-2, contact discharge
Peak reverse voltage per diode
Reference voltage gap between VREF2 and VREF1
Maximum operating signal input voltage
Minimum operating signal input voltage
Continuous forward current (single diode loaded)
Repetitive peak forward current (tp = 5 µs, F = 50 kHz)
Surge non repetitive forward current -
rectangular waveform (see curve on figure 1)
tp = 2.5 µs
tp = 1 ms
tp = 100 ms
Storage temperature range
Maximum junction temperature
THERMAL RESISTANCE
Symbol
Parameter
Rth(j-a) Junction to ambient (note 1)
Note 1: device mounted on FR4 PCB with recommended footprint dimensions.
ELECTRICAL CHARACTERISTICS (Tamb = 25°C).
Symbol
Parameter
Conditions
VF Forward voltage
IF = 50 mA
IR Reverse leakage current per diode
VR = 5 V
C Input capacitance between Line and GND see note 3
Note 2: The dynamical behavior is described in the Technical Information section, on page 4.
Value
15
8
9
9
VREF2
VREF1
200
700
Unit
kV
V
V
V
V
mA
mA
6
2
1
-55 to + 150
150
A
°C
°C
Value
500
Unit
°C/W
Typ.
7
Max.
1.2
1
Unit
V
µA
pF
Note 3: Input capacitance measurement
REF2
VR G
2/10
I/O
REF1
+V CC
REF1 connected to GND
REF2 connected to +Vcc
Input applied :
Vcc = 5V, Vsign = 30 mV, F = 1 MHz


Part Number DALC208SC6
Description LOW CAPACITANCE DIODE ARRAY
Maker STMicroelectronics
Total Page 10 Pages
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