DB-55008L-318 mosfets equivalent, rf power amplifier using 1 x pd55008l-e n-channel enhancement-mode lateral mosfets.
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Excellent thermal stability Frequency: 225 - 318 MHz Supply voltage: 13.6 V Output power: 8 W Power gain: 13.5 ± 0.7 dB Efficie.
Table 1.
Mechanical specification: L = 60 mm, W = 30 mm
Device summary
Order codes DB-55008L-318
February 2009
Rev 1.
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