Datasheet Details
| Part number | DB-55008L-318 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 538.96 KB |
| Description | RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs |
| Download | DB-55008L-318 Download (PDF) |
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| Part number | DB-55008L-318 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 538.96 KB |
| Description | RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs |
| Download | DB-55008L-318 Download (PDF) |
|
|
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The DB-55008L-318 is a common source N-channel enhancement-mode lateral field effect RF power amplifier designed for VHF SEISMIC applications.
Table 1.
Mechanical specification: L = 60 mm, W = 30 mm Device summary Order codes DB-55008L-318 February 2009 Rev 1 1/14 www.st.com 14 This is preliminary information on a new product now in development or undergoing evaluation.
www.DataSheet4U.com DB-55008L-318 RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs Preliminary.
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