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DB-55008L-318 - RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs

ST Microelectronics

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Datasheet Details

Part number: DB-55008L-318
Manufacturer: STMicroelectronics ↗
File Size: 538.96 KB
Datasheet: DB-55008L-318_STMicroelectronics.pdf
Description: RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs

DB-55008L-318 Product details

Description

The DB-55008L-318 is a common source N-channel enhancement-mode lateral field effect RF power amplifier designed for VHF.

Features

Excellent thermal stability Frequency: 225 - 318 MHz Supply voltage: 13.6 V Output power: 8 W Power gain: 13.5 ± 0.7 dB Efficiency: 51 % - 79 % BeO free amplifier.

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power amplifier using PD55008L-E N-channel enhancement-mode lateral MOSFETs ST Microelectronics

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