DB-55008L-318 is RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs manufactured by STMicroelectronics.
| Part Number | Description |
|---|---|
| DB-55008L-450 | RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs |
| DB-55015-490 | RF power amplifier using 1 x PD55015-E N-channel enhancement-mode lateral MOSFETs |
| DB-499D-470 | RF power amplifier using 1 x START499D NPN RF silicon transistor |
| DB-85015-940 | RF power amplifier using 1 x PD85015-E N-channel enhancement-mode lateral MOSFETs |
| DB-900-80W | RF Power Amplifier Demoboard |
The DB-55008L-318 is a mon source N-channel enhancement-mode lateral field effect RF power amplifier designed for VHF SEISMIC applications. Mechanical specification: L = 60 mm, W = 30 mm Device summary Order codes DB-55008L-318 February 2009 Rev 1 1/14 .st.
