DB-55008L-318 Datasheet PDF (RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs) | Download ST Microelectronics DB-55008L-318

DB-55008L-318 - RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs

Description

The DB-55008L-318 is a common source N-channel enhancement-mode lateral field effect RF power amplifier designed for VHF SEISMIC applications.

Table 1.

Features

Excellent thermal stability Frequency: 225 - 318 MHz Supply voltage: 13.6 V Output power: 8 W Power gain: 13.5 ± 0.7 dB Efficiency: 51 % - 79 % BeO free amplifier.

Datasheet Details

Part number	DB-55008L-318
Manufacturer	STMicroelectronics
File Size	538.96 KB
Description	RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs
Datasheet	DB-55008L-318 Datasheet
Additional preview pages of the DB-55008L-318 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com DB-55008L-318 RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs Preliminary Data Features ■ ■ ■ ■ ■ ■ ■ Excellent thermal stability Frequency: 225 - 318 MHz Supply voltage: 13.6 V Output power: 8 W Power gain: 13.5 ± 0.7 dB Efficiency: 51 % - 79 % BeO free amplifier Description The DB-55008L-318 is a common source N-channel enhancement-mode lateral field effect RF power amplifier designed for VHF SEISMIC applications. Table 1. Mechanical specification: L = 60 mm, W = 30 mm Device summary Order codes DB-55008L-318 February 2009 Rev 1 1/14 www.st.com 14 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. www.DataSheet4U.

Published: Jul 29, 2009 |