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EMIF03-SIM04F3 Datasheet

EMI filter including ESD protection

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EMIF03-SIM04F3
3-line IPAD™, EMI filter including ESD protection
Features
EMI symmetrical (I/O) low-pass filter
High efficiency in EMI/ESD protection
Lead-free package
Very thin package
High reliability offered by monolithic integration
High reduction of parasitic elements through
integration and wafer level packaging
Complies with the following standards
IEC 61000-4-2 level 4
– ± 15 kV (air discharge)
– ± 8 kV (contact discharge)
IEC 61000-4-2 level 1
– ± 2 kV (air discharge)
– ± 2 kV (contact discharge)
Applications
Where EMI filtering in ESD sensitive equipment is
required:
Mobile phones and communication systems
Computers, printers and MCU Boards
Description
The EMIF03-SIM04F3 Flip Chip is a low
capacitance EMI filter designed to suppress
EMI/RFI noise in all systems subjected to
electromagnetic interference.
This filter includes ESD protection circuitry, which
prevents damage to the protected device when
subjected to ESD surges up to 15 kV.
Lead-free Flip-Chip package
(11 bumps)
Figure 1. Pin configuration (bump side)
123
A
B
C
D
Figure 2. Configuration
100 Ω
A1
R1
47 Ω
B1
R2
100 Ω
C1
R3
D1 D2 D3
A3
B3
C3
A2
GND
C2
GND
A2 and C2 bumps must be connected together on the PCB
May 2010
TM: IPAD is a trademark of STMicroelectronics.
Doc ID 17053 Rev 1
1/7
www.st.com
7


STMicroelectronics Electronic Components Datasheet

EMIF03-SIM04F3 Datasheet

EMI filter including ESD protection

No Preview Available !

Electrical characteristics
1 Electrical characteristics
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EMIF03-SIM04F3
Table 1.
Symbol
Absolute maximum ratings (Tamb = 25 °C)
Parameter
Internal pins (A1, B1, C1):
ESD discharge IEC 61000-4-2, level 1, air discharge
ESD discharge IEC 61000-4-2, level 1, contact discharge
VPP External pins (A3, B3, C3, D1, D2 and D3):
ESD discharge IEC 61000-4-2, level 4, air discharge
ESD discharge IEC 61000-4-2, level 4, contact discharge
Pd Line resistance power dissipation at 70 °C
Top Operating temperature range
Tstg Storage temperature range
Figure 3. Electrical characteristics (definitions)
Value
Unit
±2
±2
±15
±15
60
- 40 to + 85
- 55 to 150
kV
mW
°C
°C
Symbol
VBR =
IRM =
RI/O =
C =line
Parameter
Breakdown voltage
Leakage current @ VRM
Series resistance
between input and output
Line capacitance
I
VBR VRM
IR
IRM
IRM
IR
VRM VBR
V
Table 2.
Symbol
Electrical characteristics (Tamb = 25 °C)
Test conditions
Min.
VBR
IRM
R1, R3
R2
Cline
IR = 1 mA
VRM = 3 V per line
Tolerance ± 20%
Tolerance ± 20%
Vline = 0 V, Vosc = 30 mV, F = 1 MHz
(measured under zero light conditions)(1)
6
80
37.6
8
1. A2 and C2 bumps must be conncted together on the printed circuit board
Typ.
50
100
47
10
Max.
100
120
56.4
12
Unit
V
nA
Ω
Ω
pF
2/7 Doc ID 17053 Rev 1


Part Number EMIF03-SIM04F3
Description EMI filter including ESD protection
Maker ST Microelectronics
Total Page 7 Pages
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