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ESDALC6V1P3 Datasheet

Low capacitance Transil arrays

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ESDALC6V1Px
Low capacitance Transil™ arrays for ESD protection
Features
2 to 4 unidirectional Transil functions
Breakdown voltage VBR = 6.1 V min.
Low leakage current < 100 nA
Low capacitance (7.5 pF @ 3 V)
Very small PCB area < 2.6 mm2
Benefits
High ESD protection level
High integration
Complies with the following standards
IEC 61000-4-2 level 4
– 15 kV (air discharge)
– 8 kV (contact discharge)
MIL STD 883E-Method 3015-7: class3
– 25 kV HBM (human body model)
Applications
Where transient overvoltage protection in ESD
sensitive equipment is required, such as:
Computers
Printers
Communication systems
Cellular phone handsets and acessories
Wireline and wireless telephone sets
Set-top boxes
Description
The ESDALC6V1Px are monolithic suppressors
designed to protect components connected to
data and transmission lines against ESD.
These devices clamp the voltage just above the
logic level supply for positive transients and to a
diode drop below ground for negative transients.
SOT-663
SOT-665
SOT-666IP
Figure 1. ESDALC6V1P3 functional diagram
Figure 2. ESDALC6V1P5 functional diagram
Figure 3. ESDALC6V1P6 functional diagram
TM: Transil is a trademark of STMicroelectronics
January 2010
Doc ID 12636 Rev 5
1/9
www.st.com
9
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STMicroelectronics Electronic Components Datasheet

ESDALC6V1P3 Datasheet

Low capacitance Transil arrays

No Preview Available !

Characteristics
1 Characteristics
ESDALC6V1Px
Table 1.
Symbol
Absolute ratings (Tamb = 25 °C)
Parameter
VPP(1) Peak pulse voltage
IEC 61000-4-2 contact discharge
IEC 61000-4-2 air discharge
PPP Peak pulse power (8/20 µs)(1) T j initial = Tamb
Tj Junction temperature
Tstg Storage temperature range
TL Maximum lead temperature for soldering during 10 s
Top Operating temperature range
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Figure 4. Electrical characteristics (definitions)
Value
±8
±15
30
150
-55 to +150
260
-40 to +150
Unit
kV
W
°C
°C
°C
°C
Symbol
VBR =
VCL =
IRM =
IF =
IPP =
IR =
VF =
C=
Rd =
αT =
Parameter
Breakdown voltage
Clamping voltage
Leakage current
Forward current
Peak pulse current
Breakdown current
Forward voltage drop
Capacitance
Dynamic impedance
Voltage temperature
I
IF
VBR
Vcl VRM
VF
IRM
V
Slope = 1/Rd
IPP
Table 2.
Electrical characteristics (Tamb = 25 °C)
VBR@ IR
IRM @ VRM
Order code min. max.
typ. max.
ESDALC6V1P3
ESDALC6V1P5
ESDALC6V1P6
V
6.1
V mA
7.2 1
nA
10
µA
0.1
V
3
Rd αTC
typ. typ. typ.@ 3V
Ω 10-4/°C
pF
1.5 4.5
7.5
2/9 Doc ID 12636 Rev 5


Part Number ESDALC6V1P3
Description Low capacitance Transil arrays
Maker STMicroelectronics
Total Page 9 Pages
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