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F11NM80 - N-CHANNEL Power MOSFET

General Description

The MDmesh™ associates the multiple drain process with the Company’s PowerMesh™ horizontal layout assuring an outstanding low onresistance.

Key Features

  • www. DataSheet4U. com Type VDSS 800 V 800 V 800 V RDS(on) < 0.40 Ω < 0.40 Ω < 0.40 Ω < 0.40 Ω RDS(on).
  • Qg 14Ω.
  • nC 14Ω.
  • nC 14Ω.
  • nC 14Ω.
  • nC ID 11 A 11 A 11 A 11 A 3 1 STB11NM80 STF11NM80 STP11NM80 TO-247 D²PAK STW11NM80 800 V.
  • Low input capacitance and gate charge Low gate input resistance Best RDS(on).
  • Qg in the industry 3 1 2 3 1 2 TO-220 TO-220FP.

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STB11NM80 - STF11NM80 STP11NM80 - STW11NM80 N-channel 800 V - 0.35 Ω - 11 A - TO-220/FP- D2PAK - TO-247 MDmesh™ Power MOSFET Features www.DataSheet4U.com Type VDSS 800 V 800 V 800 V RDS(on) < 0.40 Ω < 0.40 Ω < 0.40 Ω < 0.40 Ω RDS(on)*Qg 14Ω*nC 14Ω*nC 14Ω*nC 14Ω*nC ID 11 A 11 A 11 A 11 A 3 1 STB11NM80 STF11NM80 STP11NM80 TO-247 D²PAK STW11NM80 800 V ■ ■ ■ Low input capacitance and gate charge Low gate input resistance Best RDS(on) *Qg in the industry 3 1 2 3 1 2 TO-220 TO-220FP Application ■ Switching applications Figure 1. Internal schematic diagram Description The MDmesh™ associates the multiple drain process with the Company’s PowerMesh™ horizontal layout assuring an outstanding low onresistance.