F15NM60N Description
This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. ratings Symbol Parameter VDS Drain-source voltage (VGS=0) VGS Gate-source voltage ID Drain current (continuous) at TC = 25°C ID Drain current (continuous) at TC = 100°C IDM (2)...
F15NM60N Key Features
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Switching