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F15NM60N - N-Channel Power MOSFET

General Description

This series of devices implements the second generation of MDmesh™ Technology.

This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • Type VDSS (@Tjmax) RDS(on) ID STB15NM60N STI15NM60N STF15NM60N STP15NM60N STW15NM60N 650V 650V 650V 650V 650V < 0.299Ω < 0.299Ω < 0.299Ω < 0.299Ω < 0.299Ω 14A 14A 14A (1) 14A 14A 1. Limited only by maximum temperature allowed.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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STB15NM60N - STF/I15NM60N STP15NM60N - STW15NM60N N-channel 600V - 0.270Ω - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh™ Power MOSFET Features Type VDSS (@Tjmax) RDS(on) ID STB15NM60N STI15NM60N STF15NM60N STP15NM60N STW15NM60N 650V 650V 650V 650V 650V < 0.299Ω < 0.299Ω < 0.299Ω < 0.299Ω < 0.299Ω 14A 14A 14A (1) 14A 14A 1. Limited only by maximum temperature allowed ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Description This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.