F21NM50N Datasheet - STMicroelectronics

STF21NM50N

F21NM50N Features

* Type VDSS (@Tjmax) RDS(on) ID STB21NM50N )STB21NM50N-1 t(sSTF21NM50N cSTP21NM50N uSTW21NM50N 550V 550V 550V 550V 550V < 0.19Ω < 0.19Ω < 0.19Ω < 0.19Ω < 0.19Ω 18A 18A 18A(1) 18A 18A rod1. Limited by wire bonding P

* 100% avalanche tested te

* Low input capacitance and gate charge le

F21NM50N General Description

- OThe devices are realized with the second )generation of MDmesh Technology. This t(srevolutionary Power MOSFET associates a new cvertical structure to the company's strip layout to uyield one of the world's lowest on-resistance and dgate charge. It is therefore suitable for the most rodemanding hi.

F21NM50N Datasheet (448.99 KB)

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F21NM50N

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STMicroelectronics ↗

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Stf21nm50n.
STP/F21NM50N - STW21NM50N STB21NM50N - STB21NM50N-1 N-channel 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh™ Power MOSFET Gen.

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F21NM50N Features

F21NM50N General Description

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