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STMicroelectronics Electronic Components Datasheet

F2HNK60Z Datasheet

STF2HNK60Z

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STQ2HNK60ZR-AP
STF2HNK60Z - STD2HNK60Z-1
N-CHANNEL 600V - 4.4- 2.0A TO-92/TO-220FP/IPAK
Zener-Protected SuperMESH™ MOSFET
TYPE
VDSS RDS(on)
ID
STQ2HNK60ZR-AP 600 V
STD2HNK60Z-1
600 V
STF2HNK60Z
600 V
< 4.8
< 4.8
< 4.8
0.5 A
2.0 A
2.0 A
TYPICAL RDS(on) = 4.4
EXTREMELY HIGH dv/dt CAPABILITY
ESD IMPROVED CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
PW
3W
45 W
20 W
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
TO-92 (Ammopack)
3
2
1
TO-220FP
IPAK
3
2
1
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
AC ADAPTORS AND BATTERY CHARGERS
SWITH MODE POWER SUPPLIES (SMPS)
ORDER CODES
PART NUMBER
STD2HNK60Z-1
STQ2HNK60ZR-AP
STF2HNK60Z
MARKING
D2HNK60Z
Q2HNK60ZR
F2HNK60Z
PACKAGE
IPAK
TO-92
TO-220FP
PACKAGING
TUBE
AMMOPAK
TUBE
April 2004
1/12
Free Datasheet http://www.nDatasheet.com


STMicroelectronics Electronic Components Datasheet

F2HNK60Z Datasheet

STF2HNK60Z

No Preview Available !

STQ2HNK60ZR-AP - STF2HNK60Z - STD2HNK60Z-1
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tj Operating Junction Temperature
Tstg Storage Temperature
( ) Pulse width limited by safe operating area
(1) ISD 2 A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX.
(*) Current Limited by package
THERMAL DATA
Rthj-case
Rthj-amb
Rthj-lead
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Junction-lead Max
Maximum Lead Temperature For Soldering
Purpose
IPAK
2.0
1.26
8
45
0.36
--
IPAK
2.77
100
--
300
Value
TO-220FP
600
600
± 30
2.0 (*)
1.26 (*)
8 (*)
20
0.16
2000
4.5
2500
-55 to 150
TO-92
0.5
0.32
2
3
0.025
--
TO-220FP
6.25
62.5
--
300
TO-92
--
120
40
260
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
V
°C
°C/W
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
2
120
Unit
A
mJ
GATE-SOURCE ZENER DIODE
Symbol
Parameter
BVGSO
Gate-Source Breakdown
Voltage
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the devices
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the devices integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/12
Free Datasheet http://www.nDatasheet.com


Part Number F2HNK60Z
Description STF2HNK60Z
Maker STMicroelectronics
Total Page 12 Pages
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