6 views

G10M65DF2 Datasheet - STMicroelectronics

G10M65DF2 Trench gate field-stop IGBT

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, .

G10M65DF2 Features

* 6 µs of short-circuit withstand time

* VCE(sat) = 1.55 V (typ.) @ IC = 10 A

* Tight parameter distribution

* Safer paralleling

* Positive VCE(sat) temperature coefficient

* Low thermal resistance

* Soft and very fast recovery antiparallel diode

* Maximum junction te

G10M65DF2 Datasheet (943.40 KB)