G10M65DF2 - Trench gate field-stop IGBT

STMicroelectronics

Datasheet Details

Part number	G10M65DF2
Manufacturer	STMicroelectronics
File Size	943.40 KB
Description	Trench gate field-stop IGBT
Datasheet	G10M65DF2 Datasheet

General Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential.

Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safe

Overview

STGB10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in D²PAK package Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Internal schematic.

Key Features

6 µs of short-circuit withstand time.
VCE(sat) = 1.55 V (typ. ) @ IC = 10 A.
Tight parameter distribution.
Safer paralleling.
Positive VCE(sat) temperature coefficient.
Low thermal resistance.
Soft and very fast recovery antiparallel diode.
Maximum junction temperature: TJ = 175 °C.

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