G30M65DF2 Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum promise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling...
G30M65DF2 Key Features
- 6 µs of minimum short-circuit withstand time
- VCE(sat) = 1.55 V (typ.) @ IC = 30 A
- Tight parameters distribution
- Safer paralleling
- Low thermal resistance
- Soft and very fast recovery antiparallel diode