G30M65DF2 Datasheet - STMicroelectronics

Trench gate field-stop IGBT

G30M65DF2 General Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential..

G30M65DF2 Datasheet (689.49 KB)

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G30M65DF2

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STMicroelectronics ↗

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689.49 KB

Description:

Trench gate field-stop igbt.
STGP30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220 package Datasheet - production data TAB TO-220 1 23 Figure 1:.

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G30M65DF2 General Description

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