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G50IH65DF - Trench gate field-stop IGBT

Download the G50IH65DF datasheet PDF. This datasheet also covers the GWA50IH65DF variant, as both devices belong to the same trench gate field-stop igbt family and are provided as variant models within a single manufacturer datasheet.

General Description

The newest IGBT 650 V soft-switching IH series has been developed using an advanced proprietary trench gate field-stop structure, whose performance is optimized both in conduction and switching losses for softcommutation.

A freewheeling diode with a low drop forward voltage is included.

Key Features

  • Designed for soft-commutation only.
  • Maximum junction temperature: TJ = 175 °C.
  • VCE(sat) = 1.5 V (typ. ) @ IC = 50 A.
  • Minimized tail current.
  • Tight parameter distribution.
  • Low thermal resistance.
  • Low voltage drop freewheeling co-packaged diode Figure 1: Internal schematic diagram C (2) G (1) Sc12850_no_tab E (3).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (GWA50IH65DF-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STGWA50IH65DF Trench gate field-stop IGBT, 650 V, 50 A soft switching IH series in a TO-247 long leads package Datasheet - production data Features  Designed for soft-commutation only  Maximum junction temperature: TJ = 175 °C  VCE(sat) = 1.5 V (typ.) @ IC = 50 A  Minimized tail current  Tight parameter distribution  Low thermal resistance  Low voltage drop freewheeling co-packaged diode Figure 1: Internal schematic diagram C (2) G (1) Sc12850_no_tab E (3) Applications  Induction heating  Resonant converters  Microwave oven Description The newest IGBT 650 V soft-switching IH series has been developed using an advanced proprietary trench gate field-stop structure, whose performance is optimized both in conduction and switching losses for softcommutation.