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GB10NB37LZ - internally clamped IGBT

Description

Using the latest high voltage technology based on patented strip layout, SGS-Thomson has designed an advanced family of IGBTs with outstanding performances.

The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection.

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® STGB10NB37LZ N-CHANNEL CLAMPED 10A D2PAK INTERNALLY CLAMPED PowerMESH™ IGBT TYPE STGB10NB37LZ s s s s s s V CES CLAMPED V CE(s at) < 1.8 V IC 10 A POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX ”T4”) 3 1 DESCRIPTION Using the latest high voltage technology based on patented strip layout, SGS-Thomson has designed an advanced family of IGBTs with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection.
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