GB30V60DF Datasheet - STMicroelectronics

IGBT

GB30V60DF Features

* Maximum junction temperature: TJ = 175 °C

* Tail-less switching off

* VCE(sat) = 1.85 V (typ.) @ IC = 30 A

* Tight parameters distribution

* Safe paralleling

* Low thermal resistance

* Very fast soft recovery antiparallel diode Applications

GB30V60DF General Description

This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise E (3) between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore.

GB30V60DF Datasheet (1.83 MB)

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Datasheet Details

Part number:

GB30V60DF

Manufacturer:

STMicroelectronics ↗

File Size:

1.83 MB

Description:

Igbt.
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data TA.

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GB30V60DF IGBT STMicroelectronics

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GB30V60DF Features

GB30V60DF General Description

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