Description
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
production data
3 2 1
TO-220
3 1
D²PAK
3 2 1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STGB19NC60KDT4
GB19NC60KD
STGF19NC60KD STGP19NC60KD
GF19NC60KD GP19NC60KD
Packages D2PAK
TO-220FP TO-220
July 2012
This is information on a product in full production.Doc ID 14701 Rev 3
Features
- Low on-voltage drop (VCE(sat)).
- Low Cres / Cies ratio (no cross conduction
susceptibility).
- Short circuit withstand time 10 µs.
- IGBT co-packaged with Ultrafast free-wheeling
diode.
GF19NC60KD-STMicroelectronics.pdf
