GF19NC60KD Overview
Description
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Datasheet - production data 3 2 1 TO-220 3 1 D²PAK 3 2 1 TO-220FP Figure 1.
Key Features
- Low on-voltage drop (VCE(sat))
- Low Cres / Cies ratio (no cross conduction susceptibility)
- Short circuit withstand time 10 µs
- IGBT co-packaged with Ultrafast free-wheeling diode
