900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




STMicroelectronics Electronic Components Datasheet

GP7NC60H Datasheet

STGP7NC60H

No Preview Available !

STGP7NC60H - STGD7NC60H
N-CHANNEL 14A - 600V TO-220/DPAK
Very Fast PowerMESH™ IGBT
Table 1: General Features
TYPE
VCES VCE(sat) (Max)
IC
@25°C
@100°C
STGP7NC60H
600 V
STGD7NC60HT4 600 V
< 2.5 V
< 2.5 V
14 A
14 A
s LOWER ON-VOLTAGE DROP (Vcesat)
s OFF LOSSES INCLUDE TAIL CURRENT
s LOWER CRES/CIES RATIO
s HIGH FREQUENCY OPERATION UP TO 70
KHz
s NEW GENERATION PRODUCTS WITH
TIGHTER PARAMETER DISTRIBUTION
DESCRIPTION
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the Pow-
erMESHIGBTs, with outstanding performances.
The suffix "H" identifies a family optimized for high
frequency applications in order to achieve very
high switching performances (reduced tfall) man-
taining a low voltage drop.
Figure 1: Package
3
2
1
TO-220
3
1
DPAK
Weight for TO-220: 1.92gr ± 0.01
Weight for DPAK: 0.38gr ± 0.01
Figure 2: Internal Schematic Diagram
APPLICATIONS
s HIGH FREQUENCY INVERTERS
s SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
s MOTOR DRIVERS
Table 2: Order Code
PART NUMBER
STGP7NC60H
STGD7NC60HT4
MARKING
GP7NC60H
D7NC60H
PACKAGE
TO-220
DPAK
June 2005
PACKAGING
TUBE
TAPE & REEL
Rev. 2
1/12


STMicroelectronics Electronic Components Datasheet

GP7NC60H Datasheet

STGP7NC60H

No Preview Available !

STGP7NC60H - STGD7NC60H
Table 3: Absolute Maximum ratings
Symbol
Parameter
VCES
Collector-Emitter Voltage (VGS = 0)
VECR
Emitter-Collector Voltage
VGE Gate-Emitter Voltage
IC Collector Current (continuous) at TC = 25°C (#)
IC Collector Current (continuous) at TC = 100°C (#)
ICM ( ) Collector Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
Tstg Storage Temperature
Tj Operating Junction Temperature
( ) Pulse width limited by max. junction temperature.
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
TL Maximum Lead Temperature for Soldering
Purpose (1.6 mm from case, for 10 sec.)
TO-220
DPAK
TO-220
DPAK
TO-220
DPAK
Value
TO-220
DPAK
600
20
±20
25
14
50
80 70
0.64 0.56
55 to 150
Unit
V
V
V
A
A
A
W
W/°C
°C
Min.
Typ.
300
275
Max.
1.56
1.78
62.5
100
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: Main Parameters
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
VBR(CES) Collector-Emitter
Breakdown Voltage
IC = 1 mA, VGE = 0
600
ICES
Collector cut-off Current VCE = Max Rating, TC= 25 °C
(VGE = 0)
VCE = Max Rating, TC= 125 °C
10
1
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ± 20V , VCE = 0
±100
VGE(th) Gate Threshold Voltage VCE = VGE, IC = 250 µA
3.75
5.75
VCE(sat)
Collector-Emitter
Saturation Voltage
VGE = 15V, IC = 7 A
VGE = 15V, IC = 7 A, Tc= 125°C
1.85 2.5
1.7
(#) Calculated according to the iterative formula:
IC (T C )
=
--------------------------------T----J---M------A-----X-----–-----T----C---------------------------------
RTHJ – C × VCESAT(M AX)(TC, IC)
Unit
V
µA
mA
nA
V
V
V
2/12


Part Number GP7NC60H
Description STGP7NC60H
Maker STMicroelectronics
Total Page 12 Pages
PDF Download

GP7NC60H Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 GP7NC60H STGP7NC60H
STMicroelectronics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy