GW30N120KD Description
This high voltage and short-circuit rugged IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low ON-state behavior. Internal schematic diagram Table 1. 15 Contents Contents STGW30N120KD, STGWA30N120KD 1 Electrical ratings.
GW30N120KD Key Features
- Low on-losses
- High current capability
- Low gate charge
- Short circuit withstand time 10 µs
- IGBT co-packaged with Ultrafast free-wheeling