GW30N120KD
Description
This high voltage and short-circuit rugged IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low ON-state behavior.
Key Features
- Low on-losses
- High current capability
- Low gate charge
- Short circuit withstand time 10 µs
- IGBT co-packaged with Ultrafast free-wheeling diode
