GW30V60DF Datasheet | STMicroelectronics

Features - Maximum junction temperature: TJ = 175 °C - Tail-less switching off - VCE(sat) = 1.85 V (typ.) @ IC = 30 A - Tight parameters distribution - Safe paralleling - Low thermal resistance - Very fast soft recovery antiparallel diode Applications - Photovoltaic inverters - Uninterruptible power supply - Welding - Power factor correction - Very high frequency converters G (1) Description This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum promise E (3) between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Order codes STGB30V60DF STGP30V60DF STGW30V60DF STGWT30V60DF Table 1. Device summary Marking Package GB30V60DF GP30V60DF GW30V60DF GWT30V60DF D²PAK TO-220 TO-247 TO-3P Packaging Tape and reel Tube Tube Tube October 2013 This is information on a product in full production. Doc ID024361 Rev 4 1/22 .st. Electrical ratings STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF 1 Electrical ratings Symbol Table 2. Absolute maximum ratings Parameter Value VCES Collector-emitter voltage (VGE = 0) IC Continuous collector current at TC = 25...