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GW30V60DF - STGW30V60DF

STMicroelectronics

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Datasheet Details

Part number: GW30V60DF
Manufacturer: STMicroelectronics ↗
File Size: 1.83 MB
Datasheet: GW30V60DF-STMicroelectronics.pdf
Description: STGW30V60DF

GW30V60DF Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate field stop structure..

Features

Maximum junction temperature: TJ = 175 °C.
Tail-less switching off.
VCE(sat) = 1.85 V (typ. ) @ IC = 30 A.
Tight parameters distribution.
Safe paralleling.
Low thermal resistance.
Very fast soft recovery antiparallel diode.

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STGW30V60DF STMicroelectronics

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