GW39NC60VD Description
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behaviour. Internal schematic diagram Table 1. Device summary Order code Marking GW39NC60VD Package TO-247 Packaging Tube STGW39NC60VD January 2008 Rev 7 1/15 .st.
GW39NC60VD Key Features
- Low CRES / CIES ratio (no cross conduction susceptibility) IGBT co-packaged with ultra fast free-wheeling diode