GW40NC60KD
Overview
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
- Low on-voltage drop (VCE(sat))
- Low Cres / Cies ratio (no cross conduction susceptibility)
- Short-circuit withstand time 10 µs 2 1 3
- IGBT co-packaged with ultra fast free-wheeling diode TO-247
