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GW60V60DF Datasheet - STMicroelectronics

Trench gate field-stop IGBT

GW60V60DF Features

* Maximum junction temperature: TJ = 175 °C

* Tail-less switching off

* VCE(sat) = 1.85 V (typ.) @ IC = 60 A

* Tight parameter distribution

* Safe paralleling

* Low thermal resistance

* Very fast soft recovery antiparallel diode 3 2 1 TO-3P Fi

GW60V60DF General Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore,.

GW60V60DF Datasheet (1.56 MB)

Preview of GW60V60DF PDF

Datasheet Details

Part number:

GW60V60DF

Manufacturer:

STMicroelectronics ↗

File Size:

1.56 MB

Description:

Trench gate field-stop igbt.
STGW60V60DF, STGWA60V60DF STGWT60V60DF Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Datasheet - production data 3 2 1 TO-247 TAB.

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GW60V60DF Trench gate field-stop IGBT STMicroelectronics

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