STGW60V60DF, STGWA60V60DF
STGWT60V60DF
Trench gate field-stop IGBT, V series
600 V, 60 A very high speed
Datasheet - production data
3
2
1
TO-247
TAB
TO-247 long leads
Features
• Maximum junction temperature: TJ = 175 °C
• Tail-less switching off
• VCE(sat) = 1.85 V (typ.) @ IC = 60 A
• Tight parameter distribution
• Safe paralleling
• Low thermal resistance
• Very fast soft recovery antiparallel diode
3
2
1
TO-3P
Figure 1. Internal schematic diagram
C (2 or TAB)
Applications
• Photovoltaic inverters
• Uninterruptible power supply
• Welding
• Power factor correction
• Very high frequency converters
G (1)
E (3)
Description
These devices are IGBTs developed using an
advanced proprietary trench gate field-stop
structure. These devices are part of the V series
of IGBTs, which represents an optimum
compromise between conduction and switching
losses to maximize the efficiency of very high
frequency converters. Furthermore, a positive
VCE(sat) temperature coefficient and very tight
parameter distribution result in safer paralleling
operation.
Order code
STGW60V60DF
STGWA60V60DF
STGWT60V60DF
Table 1. Device summary
Marking
Package
GW60V60DF
TO-247
G60V60DF
GWT60V60DF
TO-247 long leads
TO-3P
Packing
Tube
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September 2016
This is information on a product in full production.
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