GWA75H65DRFB2AG
GWA75H65DRFB2AG is Automotive-grade trench gate field-stop IGBT manufactured by STMicroelectronics.
Automotive-grade trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO‑247 long leads package
Features
TO-247 long leads C(2, TAB)
G(1)
E(3)
NG1E3C2T
- AEC-Q101 qualified
- Maximum junction temperature: TJ = 175 °C
- Low VCE(sat) = 1.6 V (typ.) @ IC = 75 A
- Co-packed with high ruggedness rectifier diode
- Minimized tail current
- Tight parameter distribution
- Low thermal resistance
- Positive VCE(sat) temperature coefficient
Applications
- DC/DC converter for EV/HEV
- On board charger (OBC)
Description
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The...
