GWT60V60DF Overview
Description
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.
Key Features
- Maximum junction temperature: TJ = 175 °C
- Tail-less switching off
- VCE(sat) = 1.85 V (typ.) @ IC = 60 A
- Tight parameter distribution
- Safe paralleling
- Low - Very fast soft recovery antiparallel diode 3 2 1 TO-3P Figure
- Internal C (2 or TAB)
