Datasheet Details
| Part number | GWT60V60DF |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 1.54 MB |
| Description | Trench gate field-stop IGBT |
| Datasheet |
 GWT60V60DF Datasheet
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General Description
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure.
These devices are part of the V series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.
Key Features
- Maximum junction temperature: TJ = 175 °C.
- Tail-less switching off.
- VCE(sat) = 1.85 V (typ. ) @ IC = 60 A.
- Tight parameter distribution.
- Safe paralleling.
- Low thermal resistance.
- Very fast soft recovery antiparallel diode 3 2 1 TO-3P Figure 1. Internal schematic diagram C (2 or TAB).