H32N65DM6 Datasheet - STMicroelectronics

N-channel Power MOSFET

H32N65DM6 Features

* Order code SH32N65DM6AG VDS 650 V RDS(on) max. 97 mΩ ID 32 A

* AQG 324 qualified

* Half-bridge power module

* 650 V blocking voltage

* Fast recovery body diode

* Very low switching energies

* Low package inductance

* Dice on direct bond cop

H32N65DM6 General Description

This device combines two MOSFETs in a half-bridge topology. The ACEPACK SMIT is a very compact and rugged power module in a surface mount package for easy assembly. Thanks to the DBC substrate, the ACEPACK SMIT package offers low thermal resistance coupled with an isolated top-side thermal pad. The .

H32N65DM6 Datasheet (471.55 KB)

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Datasheet Details

Part number:

H32N65DM6

Manufacturer:

STMicroelectronics ↗

File Size:

471.55 KB

Description:

N-channel power mosfet.
SH32N65DM6AG Datasheet Automotive-grade N-channel 650 V, 89 mΩ typ., 32 A MDmesh DM6 half‑bridge topology Power MOSFET in an ACEPACK SMIT package 89 .

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H32N65DM6 N-channel Power MOSFET STMicroelectronics

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H32N65DM6 Features

H32N65DM6 General Description

Datasheet Details

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Description:

H32N65DM6 Distributor