900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




STMicroelectronics Electronic Components Datasheet

H6NA80FI Datasheet

STH6NA80FI

No Preview Available !

STW6NA80
® STH6NA80FI
N - CHANNELwww.datasheet4u.com 800V - 1.8- 5.4A - TO-247/ISOWATT218
FAST POWER MOS TRANSISTOR
TYPE
S TW 6NA8 0
STH6NA80FI
V DSS
800 V
800 V
RDS(on)
< 2.2
< 2.2
ID
5.4 A
3.4 A
s TYPICAL RDS(on) = 1.8
s AVALANCE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
s VERY HIGH CURRENT CAPABILITY
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
TO-247
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
VDS Drain-source Voltage (VGS = 0)
V DGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM () Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
VISO I nsulat ion W ithstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
October 1998
Value
STW6NA80 STH6NA80FI
800
800
± 30
5.4 3.4
3.4 2.1
22 22
150 60
1.2 0.48
4000
-65 to 150
150
Un it
V
V
V
A
A
A
W
W /o C
V
oC
oC
1/10


STMicroelectronics Electronic Components Datasheet

H6NA80FI Datasheet

STH6NA80FI

No Preview Available !

STW6NA80-STH6NA80FI
THERMAL DATA
www.datasheRett4huj -.ccaosme
R th j -a mb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO-247
0.83
ISOW AT T218
2.08
30
0.1
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbo l
IAR
EAS
EAR
IAR
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
Max Value
5.4
150
5.8
3.4
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
IDSS
IGSS
Pa ram et e r
Test Conditions
Dr ain- s ou rc e
Breakdown Voltage
ID = 250 µ A VGS = 0
Zero G ate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 100 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
800
Typ. Max.
25
50
± 100
Unit
V
µA
µA
nA
ON ()
Symbo l
VGS(th)
RDS(on)
ID(o n)
Pa ram et e r
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On
Resistance
On State Drain Current
VGS = 10 V ID = 3 A
VGS = 10 V ID = 3 A Tc = 100oC
VDS > ID(o n) x RDS(on )ma x
VGS = 10 V
Min.
2.25
T yp.
3
Max.
3.75
Unit
V
1.8 2.2
4.4
5.4
A
DYNAMIC
Symbo l
gfs ()
Ciss
Coss
Crss
Pa ram et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Cap a ci t an c e
Test Conditions
VDS > ID(o n) x RDS(on )ma x ID = 3 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
3
T yp.
5.5
Max.
Unit
S
1250
140
35
1700
190
50
pF
pF
pF
2/10


Part Number H6NA80FI
Description STH6NA80FI
Maker ST Microelectronics
Total Page 10 Pages
PDF Download

H6NA80FI Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 H6NA80FI STH6NA80FI
ST Microelectronics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy