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JANKCA2N2484 Datasheet

SEMICONDUCTOR DEVICE/ TRANSISTOR/ NPN/ SILICON/ LOW-POWER TYPES 2N2484/ 2N2484UA/ 2N2484UB/ JAN/ JANTX/ JANTXV/ JANS/ JANHC/ AND JANKC

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The documentation and process
conversion measures necessary to
comply with this revision shall be
completed by 31 November 2000.
INCH-POUND
MIL-PRF-19500/376E
31 August 2000
SUPERSEDING
MIL-PRF-19500/376D
21 August 1998
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER
TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors.
Four levels of product assurance is provided for each device type as specified in MIL-PRF-19500. Two levels of
product assurance are provided for die.
1.2 Physical dimensions. See figure 1 (similar to T0-18), figures 2 and 3 (surface mount case outlines UA and
UB), and figures 4 and 5 (die).
1.3 Maximum ratings.
Types
PT
TA = +25°C
VCBO
VEBO
VCEO
IC
TJ and TSTG
RθJA
RθJC
mW
V dc
V dc
V dc
2N2484
500 (1)
60
6 60
2N2484UA
650 (2)
60
6 60
2N2484UB
500 (1)
60
6 60
(1) Derate linearly at 3.08 mW/°C above TA = +37.5°C
(2) Derate linearly at 4.76 mW/°C above TA = +63.5°C.
1.4 Primary electrical characteristics.
mA dc
50
50
50
°C
-65 to +200
-65 to +200
-65 to +200
°C/W
325
210
325
°C/W
146
160
146
Limits
hfe
VCE = 5 V dc
IC = 1 mA dc
f = 1 kHz
Cobo
IE = 0
VCB = 5 V dc
100 kHz f 1 MHz
pF
Min 250
Max 900
(1) Pulsed (see 4.5.1).
5.0
|hfe|2
IC = 500 µA dc
VCE = 5 V dc
f = 30 MHz
2.0
7.0
VCE(sat) (1)
IC = 1.0 mA dc
IB = 0.1 mA dc
V dc
0.3
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC/VAC,
Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961


STMicroelectronics Electronic Components Datasheet

JANKCA2N2484 Datasheet

SEMICONDUCTOR DEVICE/ TRANSISTOR/ NPN/ SILICON/ LOW-POWER TYPES 2N2484/ 2N2484UA/ 2N2484UB/ JAN/ JANTX/ JANTXV/ JANS/ JANHC/ AND JANKC

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MIL-PRF-19500/376E
Symbol
CD
CH
HD
LC
LD
LL
LU
L1
L2
Q
TL
TW
r
α
Dimensions
Inches
Millimeters
Min Max Min Max
.178 .195 4.52 4.95
.170 .210 4.32 5.33
.209 .230 5.31 5.84
.100 TP
2.54 TP
.016 .021 0.41 0.53
.500 .750 12.7 19.05
0
.016 .019 0.41 0.48
--- .050 --- 1.27
.250 --- 6.35 ---
--- .040 --- 0.86
.028 .048 0.71 1.22
.036 .046 0.91 1.17
--- .010 --- 0.25
45° TP
45° TP
Note
6
7,8
7,8
7,8
7,8
7,8
5
3,4
3
10
6
NOTES:
1. Dimension are in inches.
2. Metric equivalents are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall
be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition
(MMC) relative to tab at MMC.
7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL
minimum. Diameter is uncontrolled in L1 and beyond LL minimum.
8. All three leads.
9. The collector shall be internally connected to the case.
10. Dimension r (radius) applies to both inside corners of tab.
11. In accordance with ANSI Y14.5M, diameters are equivalent to φx symbology.
12. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
FIGURE 1. Physical dimensions (similar to TO-18).
2


Part Number JANKCA2N2484
Description SEMICONDUCTOR DEVICE/ TRANSISTOR/ NPN/ SILICON/ LOW-POWER TYPES 2N2484/ 2N2484UA/ 2N2484UB/ JAN/ JANTX/ JANTXV/ JANS/ JANHC/ AND JANKC
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