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JSR2907 - PNP Transistor

General Description

The 2N2907AHR is a silicon planar PNP transistor specifically designed and housed in hermetic packages for aerospace and Hi-Rel applications.

It is available in the JAN qualification system (MIL-PRF19500 compliance) and in the ESCC qualification system (ESCC 5000 compliance).

Key Features

  • VCBO IC(max. ) 60 V ESCC JANS 0.5 A 0.6 A.
  • Hermetic packages.
  • ESCC and JANS qualified.
  • Up to 100 krad(Si) low dose rate HFE at 10 V, 150 mA > 100 Tj(max. ) 200 °C.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N2907AHR Datasheet Rad-hard 60 V, 0.6 A PNP transistor 3 1 2 LCC-3 3 4 1 2 UB Pin 4 in UB is connected to the metallic lid. C (3) (2) B E (1) DS10460 Product status link 2N2907AHR Features VCBO IC(max.) 60 V ESCC JANS 0.5 A 0.6 A • Hermetic packages • ESCC and JANS qualified • Up to 100 krad(Si) low dose rate HFE at 10 V, 150 mA > 100 Tj(max.) 200 °C Description The 2N2907AHR is a silicon planar PNP transistor specifically designed and housed in hermetic packages for aerospace and Hi-Rel applications. It is available in the JAN qualification system (MIL-PRF19500 compliance) and in the ESCC qualification system (ESCC 5000 compliance). In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence.