L55NH3LL Datasheet - STMicroelectronics

N-channel Power MOSFET

L55NH3LL Features

* Type VDSS RDS(on) max ID STL55NH3LL 30 V < 0.0088 Ω 15 A t(s)

* Improved die-to-footprint ratio c

* Very low profile package (1mm max) du

* Very low thermal resistance ro )

* Very low gate charge P t(s

* Low threshold device lete ducApplication so ro

* Switching application

L55NH3LL General Description

t(s) oleThis application specific Power MOSFET is the slatest generation of STMicroelectronics unique c b“STripFET™” technology. The resulting transistor u Ois optimized for low on-resistance and minimal rod -gate charge. The chip-scaled PowerFLAT™ P t(s)package allows a significant board space savi.

L55NH3LL Datasheet (392.36 KB)