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L6386E - High voltage high and low-side driver

General Description

The L6386E is a high voltage gate driver, manufactured with the BCD™ “offline” technology, and able to drive simultaneously one high and one low-side power MOSFET or IGBT device.

Key Features

  • High voltage rail up to 600 V.
  • dV/dt immunity ± 50 V/nsec in full temperature range.
  • Driver current capability:.
  • 400 mA source.
  • 650 mA sink.
  • Switching times 50/30 nsec rise/fall with 1 nF load.
  • CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down.
  • Undervoltage lockout on lower and upper driving section.
  • Integrated bootstrap diode.
  • Outputs in phase with inputs.

📥 Download Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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L6386E High voltage high and low-side driver DIP-14 SO-14 Features  High voltage rail up to 600 V  dV/dt immunity ± 50 V/nsec in full temperature range  Driver current capability: – 400 mA source – 650 mA sink  Switching times 50/30 nsec rise/fall with 1 nF load  CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down  Undervoltage lockout on lower and upper driving section  Integrated bootstrap diode  Outputs in phase with inputs Applications  Home appliances  Induction heating  Industrial applications and drives  Motor drivers – SR motors – DC, AC, PMDC and PMAC motors  Asymmetrical half-bridge topologies  HVAC  Lighting applications  Factory automation  Power supply systems Datasheet - production data Description The L6386E is a high voltage gate driver, manu