L6491 Datasheet - STMicroelectronics

L6491 High voltage high and low-side 4A gate driver

The L6491 is a high voltage device manufactured with the BCD6 “OFF-LINE” technology. It is a single-chip half-bridge gate driver for N-channel power MOSFET or IGBT. The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 .

L6491 Features

* High voltage rail up to 600 V

* dV/dt immunity ± 50 V/ns in full temperature range

* Driver current capability: 4 A source/sink

* Switching times 15 ns rise/fall with 1 nF load

* 3.3 V, 5 V TTL/CMOS inputs with hysteresis

* Integrated bootstrap diode

L6491-STMicroelectronics.pdf