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L6491 - High voltage high and low-side 4A gate driver

General Description

The L6491 is a high voltage device manufactured with the BCD6 “OFF-LINE” technology.

It is a single-chip half-bridge gate driver for N-channel power MOSFET or IGBT.

The high-side (floating) section is designed to stand a voltage rail up to 600 V.

Key Features

  • High voltage rail up to 600 V.
  • dV/dt immunity ± 50 V/ns in full temperature range.
  • Driver current capability: 4 A source/sink.
  • Switching times 15 ns rise/fall with 1 nF load.
  • 3.3 V, 5 V TTL/CMOS inputs with hysteresis.
  • Integrated bootstrap diode.
  • Comparator for fault protections.
  • Smart shutdown function.
  • Adjustable deadtime.
  • Interlocking function.
  • Compact and simplified layout.
  • Bill of ma.

📥 Download Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SO-14 Product status link L6491 Product label L6491 Datasheet High voltage high and low-side 4 A gate driver Features • High voltage rail up to 600 V • dV/dt immunity ± 50 V/ns in full temperature range • Driver current capability: 4 A source/sink • Switching times 15 ns rise/fall with 1 nF load • 3.