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L6494 Datasheet

Manufacturer: STMicroelectronics
L6494 datasheet preview

L6494 Details

Part number L6494
Datasheet L6494-STMicroelectronics.pdf
File Size 447.25 KB
Manufacturer STMicroelectronics
Description High voltage high and low-side 2A gate driver
L6494 page 2 L6494 page 3

L6494 Overview

The L6494 is a high-voltage device manufactured with the BCD6 “offline” technology. It is a single chip half-bridge gate driver for N-channel power MOSFETs or IGBTs. The high-side (floating) section is designed to stand a DC voltage rail up to 500 V, with 600 V transient withstand voltage.

L6494 Key Features

  • Transient withstand voltage 600 V
  • dV/dt immunity ± 50 V/ns in full temperature
  • Driver current capability
  • 2 A source typ. at 25 °C
  • 2.5 A sink typ. at 25 °C
  • Short propagation delay: 85 ns
  • Switching times 25 ns rise/fall with 1 nF load
  • Integrated bootstrap diode
  • Single input and shutdown pin
  • Adjustable deadtime

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