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L6494 - High voltage high and low-side 2A gate driver

General Description

The L6494 is a high-voltage device manufactured with the BCD6 “offline” technology.

It is a single chip half-bridge gate driver for N-channel power MOSFETs or IGBTs.

The high-side (floating) section is designed to stand a DC voltage rail up to 500 V, with 600 V transient withstand voltage.

Key Features

  • Transient withstand voltage 600 V.
  • dV/dt immunity ± 50 V/ns in full temperature range.
  • Driver current capability:.
  • 2 A source typ. at 25 °C.
  • 2.5 A sink typ. at 25 °C.
  • Short propagation delay: 85 ns.
  • Switching times 25 ns rise/fall with 1 nF load.
  • Integrated bootstrap diode.
  • Single input and shutdown pin.
  • Adjustable deadtime.
  • 3.3 V, 5 V TTL/CMOS inputs with hysteresis.
  • UVLO on both high-side and low-side sections.
  • Compact a.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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L6494 High voltage high and low-side 2 A gate driver SO-14 Features  Transient withstand voltage 600 V  dV/dt immunity ± 50 V/ns in full temperature range  Driver current capability: – 2 A source typ. at 25 °C – 2.5 A sink typ. at 25 °C  Short propagation delay: 85 ns  Switching times 25 ns rise/fall with 1 nF load  Integrated bootstrap diode  Single input and shutdown pin  Adjustable deadtime  3.