STMicroelectronics L75NH3LL
This application specific Power MOSFET is the c b latest generation of STMicroelectronics unique du O “STripFET™” technology. The resulting transistor ro ) - is optimized for low on-resistance and minimal P t(s gate charge.| Part No. | L75NH3LL |
|---|---|
| Datasheet | L75NH3LL Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel MOSFET |
| Buy | Stock & Price |
FEATURES
Type VDSS RDS(on) max ID STL75NH3LL 30V < 0.0057 Ω 20 A (1) t(s) 1. This value is according Rthj-pcb c● Improved die-to-footprint ratio u
● Very low profile package (1mm max) rod )
● Very low thermal resistance P t(s
● Very low gate charge te c
● Low threshold device sole rodu Application b P
● Switching applications ) - O lete
DESCRIPTION
t(s so The chip-scaled PowerFLAT™ package allows a significant board space saving, te c still boosting the performance. PowerFLAT™(6x5) Figure 1. Internal schematic diagram Obsolleete Produ Table 1. Device summary soOrder code Ob STL75NH3LL Marking L75NH3LL Package PowerFLAT™ (6 x 5) Packaging Tape and reel June 2008 Rev 1 1/12 12 Contents Contents STL75NH3LL 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . .
