Datasheet4U Logo Datasheet4U.com

M24C08-A125 - Automotive 8-Kbit serial I2C bus EEPROM

General Description

The M24C08-A125 is a 8-Kbit serial EEPROM automotive grade device operating up to 125 °C.

The M24C08A125 is compliant with the very high level of reliability defined by the automotive standard AEC-Q100 grade 1.

Key Features

  • AEC-Q100 qualified.
  • Compatible with all I2C bus modes.
  • 1 MHz.
  • 400 kHz.
  • 100 kHz.
  • Memory array.
  • 8 Kbits (1024 bytes) of EEPROM.
  • Page size: 16 bytes.
  • Additional write lockable page (identification page).
  • Extended temperature and voltage ranges.
  • -40 °C to 125 °C; 1.7 V to 5.5 V.
  • Schmitt trigger inputs for noise filtering.
  • Short write cycle time.
  • Byte write within 4 ms.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
M2408NC020 Fast Recovery Diode IXYS
M2408NC040 Fast Recovery Diode IXYS
M2408NC060 Fast Recovery Diode IXYS
M2408ND020 Fast Recovery Diode IXYS
M2408ND040 Fast Recovery Diode IXYS

Other Datasheets by STMicroelectronics

Part Number Description
M24C08-125 serial I2C bus EEPROM
M24C08-DRE 8-Kbit serial I2C bus EEPROM
M24C08-F 8-Kbit serial I2C bus EEPROM
M24C08-R 8-Kbit serial I2C bus EEPROM
M24C08-W 8-Kbit serial I2C bus EEPROM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
M24C08-A125 Datasheet Automotive 8-Kbit serial I²C bus EEPROM with 1 MHz clock TSSOP8 (DW) 169 mil width SO8N (MN) 150 mil width WFDFPN8 (MF) DFN8 - 2 x 3 mm Product status link M24C08-A125 Product label Features • AEC-Q100 qualified • Compatible with all I2C bus modes – 1 MHz – 400 kHz – 100 kHz • Memory array – 8 Kbits (1024 bytes) of EEPROM – Page size: 16 bytes – Additional write lockable page (identification page) • Extended temperature and voltage ranges – -40 °C to 125 °C; 1.7 V to 5.5 V • Schmitt trigger inputs for noise filtering • Short write cycle time – Byte write within 4 ms – Page write within 4 ms • Write cycle endurance – 4 million write cycles at 25 °C – 1.