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M29DW640F Datasheet 64 Mbit 3v Supply Flash Memory

Manufacturer: STMicroelectronics

Overview: M29DW640F 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory Feature summary ■ Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Page Read mode – Page Width 8 Words – Page Access 25, 30ns – Random Access 60, 70ns ■ Programming time – 10µs per Byte/Word typical – 4 Words / 8 Bytes at-a-time Program ■ Memory blocks – Quadruple Bank Memory Array: 8Mbit+24Mbit+24Mbit+8Mbit – Parameter Blocks (at both Top and Bottom) ■ Dual operations – While Program or Erase in a group of banks (from 1 to 3), Read in any of the other banks ■ Program/Erase Suspend and Resume – Read from any Block during Program Suspend – Read and Program another Block during Erase Suspend ■ Unlock Bypass Program command – Faster Production/Batch Programming ■ VPP/WP pin for Fast Program and Write Protect ■ Temporary Block Unprotection mode ■ Common Flash Interface – 64 bit Security Code ■ Extended Memory Block – Extra block used as security block or to store additional information TSOP48 (N) 12 x 20mm FBGA TFBGA48 (ZE) 6 x 8 mm ■ Low power consumption – Standby and Automatic Standby ■ 100,000 Program/Erase cycles per block ■ Electronic Signature – Manufacturer Code: 0020h – Device Code: 227Eh + 2202h + 2201 ■ ECOPACK® packages available August 2006 Rev 3 1/74 www.st.

General Description

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