Datasheet Summary
M29F400BT M29F400BB
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Single Supply Flash Memory s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS s ACCESS TIME: 45ns s PROGRAMMING TIME
- 8µs per Byte/Word typical s 11 MEMORY BLOCKS
- 1 Boot Block (Top or Bottom Location)
- 2 Parameter and 8 Main Blocks s PROGRAM/ERASE CONTROLLER
- Embedded Byte/Word Program algorithm
- Embedded Multi-Block/Chip Erase algorithm
- Status Register Polling and Toggle Bits
- Ready/Busy Output Pin s ERASE SUSPEND and RESUME MODES
- Read and Program another Block during
Erase Suspend s UNLOCK BYPASS PROGRAM MAND
- Faster Production/Batch Programming s TEMPORARY BLOCK UNPROTECTION
MODE s LOW...
