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M29F400BB - 4-Mbit Single Supply Flash Memory

Download the M29F400BB datasheet PDF. This datasheet also covers the M29F400BT variant, as both devices belong to the same 4-mbit single supply flash memory family and are provided as variant models within a single manufacturer datasheet.

Description

The M29F400B is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed.

These operations can be performed using a single 5V supply.

On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M29F400BT-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
M29F400B 4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Single Supply Flash Memory ST Microelectronics
M29F400FB Micron Parallel NOR Flash Embedded Memory Micron
M29F400FB (M29Fxx0Fx) Top / Bottom Boot Block 5 V Supply Flash Memory Numonyx
M29F400FT Micron Parallel NOR Flash Embedded Memory Micron
M29F400FT (M29Fxx0Fx) Top / Bottom Boot Block 5 V Supply Flash Memory Numonyx

Other Datasheets by STMicroelectronics

Part Number Description
M29F400BT 4-Mbit Single Supply Flash Memory
M29DW323DB 32 Mbit 3V Supply Flash Memory
M29DW323DT 32 Mbit 3V Supply Flash Memory
M29DW324DB 32 Mbit 3V Supply Flash Memory
M29DW324DT 32 Mbit 3V Supply Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
M29F400BT M29F400BB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Single Supply Flash Memory s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS s ACCESS TIME: 45ns s PROGRAMMING TIME – 8µs per Byte/Word typical s 11 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 8 Main Blocks s PROGRAM/ERASE CONTROLLER – Embedded Byte/Word Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits – Ready/Busy Output Pin s ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend s UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming s TEMPORARY BLOCK UNPROTECTION MODE s LOW POWER CONSUMPTION – Standby and Automatic Standby s 100,000 PROGRAM/ERASE CYCLES per BLOCK s 20 YEARS DATA
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