M58WR032ET Features
* SUMMARY
* www.DataSheet4U.com
* SUPPLY VOLTAGE
* VDD = 1.65V to 2.2V for Program, Erase and Read
* VDDQ = 1.65V to 3.3V for I/O Buffers
* VPP = 12V for fast Program (optional) SYNCHRONOUS / ASYNCHRONOUS READ
M58WR032EB_STMicroelectronics.pdf
Datasheet Details
M58WR032ET, M58WR032EB
1.24 MB
Flash memory.
This datasheet PDF includes multiple part numbers: M58WR032ET, M58WR032EB.
Please refer to the document for exact specifications by model.
📁 Related Datasheet
M58WR032EB Flash Memory (ST Microelectronics)
M58WR032KB 32Mb Multi Bank Burst Flash memories (Micron)
M58WR032KL Flash memories (ST Microelectronics)
M58WR032KT 32Mb Multi Bank Burst Flash memories (Micron)
M58WR032KU Flash memories (ST Microelectronics)
M58WR016KL Flash memories (ST Microelectronics)
M58WR016KU Flash memories (ST Microelectronics)
M58WR064B FLASH MEMORY (STMicroelectronics)
M58WR032ET Distributor
