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M74HC04 - HEX INVERTER

Datasheet Summary

Description

The M74HC04 is a high-speed CMOS hex inverter manufactured using silicon gate C2MOS technology.

The internal circuit is composed of 3 stages including a buffer output which enables high noise immunity and stable output.

Features

  • High speed: tPD = 8 ns (typ. ) at VCC = 6 V.
  • Low power dissipation: ICC = 1 μA (max. ) at TA = 25 °C.
  • High noise immunity: VNIH = VNIL = 28% VCC (min. ).
  • Symmetrical output impedance: |IOH| = IOL = 4 mA (min) at VCC = 4.5 V.
  • Balanced propagation delays: tPLH @ tPHL.
  • Wide operating voltage range: VCC (OPR) = 2 V to 6 V.
  • Pin and function compatible with 74 series 04.
  • ESD performance.
  • CDM: 1 kV.
  • HBM: 2 kV.
  • MM: 200 V.

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Datasheet Details

Part number M74HC04
Manufacturer STMicroelectronics
File Size 306.14 KB
Description HEX INVERTER
Datasheet download datasheet M74HC04 Datasheet
Additional preview pages of the M74HC04 datasheet.

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Full PDF Text Transcription

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M74HC04 Hex inverter Datasheet - production data DIP14 SO14 TSSOP14 Features  High speed: tPD = 8 ns (typ.) at VCC = 6 V  Low power dissipation: ICC = 1 μA (max.) at TA = 25 °C  High noise immunity: VNIH = VNIL = 28% VCC (min.)  Symmetrical output impedance: |IOH| = IOL = 4 mA (min) at VCC = 4.5 V  Balanced propagation delays: tPLH @ tPHL  Wide operating voltage range: VCC (OPR) = 2 V to 6 V  Pin and function compatible with 74 series 04  ESD performance – CDM: 1 kV – HBM: 2 kV – MM: 200 V Description The M74HC04 is a high-speed CMOS hex inverter manufactured using silicon gate C2MOS technology. The internal circuit is composed of 3 stages including a buffer output which enables high noise immunity and stable output.
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