M95160-DF
Key Features
- Memory array - 16 Kb (2 Kbytes) of EEPROM - Page size: 32 bytes - Additional Write lockable Page (Identification page)
- Write - Byte Write within 5 ms - Page Write within 5 ms
- Write Protect: quarter, half or whole memory array
- High-speed clock: 20 MHz
- Single supply voltage: - 2.5 V to 5.5 V for M95160-W - 1.8 V to 5.5 V for M95160-R - 1.7 V to 5.5 V for M95160-DF
- Operating temperature range: from -40°C up to +85°C
- Enhanced ESD protection
- More than 4 million Write cycles
- More than 200-year data retention