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M95512-DF - 512-Kbit Serial SPI bus EEPROM

Download the M95512-DF datasheet PDF. This datasheet also covers the M95512-R variant, as both devices belong to the same 512-kbit serial spi bus eeprom family and are provided as variant models within a single manufacturer datasheet.

General Description

The M95512 devices are electrically erasable programmable memories (EEPROMs) organized as 65536 x 8 bits, accessed through the SPI bus.

Key Features

  • Compatible with the serial peripheral interface (SPI) bus.
  • Memory array.
  • 512-Kbit (64-Kbyte) of EEPROM.
  • Page size: 128 bytes.
  • Additional write lockable page (Identification page).
  • Write time.
  • Byte Write within 5 ms.
  • Page Write within 5 ms.
  • Write protect.
  • quarter array.
  • half array.
  • whole memory array.
  • High-speed clock: 16 MHz.
  • Single supply voltage:.
  • 2.5 V to 5.5.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M95512-R_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for M95512-DF (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for M95512-DF. For precise diagrams, and layout, please refer to the original PDF.

M95512-W M95512-R M95512-DF Datasheet 512-Kbit serial SPI bus EEPROM SO8N (150 mil width) TSSOP8 (169 mil width) UFDFPN8 (DFN8) (2 x 3 mm) WLSCP8 (1.289 x 1.955 mm) Produ...

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9 mil width) UFDFPN8 (DFN8) (2 x 3 mm) WLSCP8 (1.289 x 1.955 mm) Product status link M95512-DF M95512-R M95512-W Features • Compatible with the serial peripheral interface (SPI) bus • Memory array – 512-Kbit (64-Kbyte) of EEPROM – Page size: 128 bytes – Additional write lockable page (Identification page) • Write time – Byte Write within 5 ms – Page Write within 5 ms • Write protect – quarter array – half array – whole memory array • High-speed clock: 16 MHz • Single supply voltage: – 2.5 V to 5.5 V for M95512-W – 1.8 V to 5.5 V for M95512-R – 1.7 V to 5.