STMicroelectronics MJD117T4
Complementary power Darlington transistor
FEATURES
TAB 23 1 DPAK● Good hFE linearity
● High fT frequency
● Monolithic Darlington configuration with integrated antiparallel collector-emitter diode C (2, TAB) C (2, TAB) B (1) R1 R2 SC07840 E (3) R1 typ. = 15 kΩ B (1) R1 R2 SC07850 E (3) R2 typ. = 100 Ω Application
● Linear and switching industrial equipment
DESCRIPTION
These devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. Product status links MJD112T4 MJD117T4 Product summary Order code MJD112T4 Marking MJD112 Polarity NPN Package DPAK Packing Tape and reel Order code MJD117T4 Marking MJD117 Polarity PNP Package DPAK Packing Tape and reel DS14946 - Rev 3 - June 2025 For further information, contact your local STMicroelectronics sales office. 1 Note: Electrical ratings Symbol VCEO VCBO VEBO IC ICM IB PTOT Tstg TJ Table 1. Absolute maximum ratings Parameter Collector-emitter voltage (IB = 0 A) Collector-base voltage (IE = 0 A) Emitter-base voltage (IC = 0 A) Collect...