MSC81010 - RF & MICROWAVE TRANSISTORS

STMicroelectronics

General Description

The MSC81010 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone, emitter ballasted geometry with a refractory/gold metallization system.

This device is capable of withstanding infinite load VSWR at any phase angle under rated conditions.

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MSC81010 rf & microwave transistors by STMicroelectronics - Datasheet Preview

Datasheet Details

Part number	MSC81010
Manufacturer	STMicroelectronics
File Size	127.38 KB
Description	RF & MICROWAVE TRANSISTORS
Datasheet	MSC81010 Datasheet

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MSC81010 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . . EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC ® PACKAGE P OUT = 10 W MIN. WITH 10 dB GAIN @ 1 GHz .230 2L STUD (S016) hermetically sealed ORDER CODE MSC81010 BRANDING 81010 PIN CONNECTION www.DataSheet4U.com DESCRIPTION The MSC81010 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone, emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding infinite load VSWR at any phase angle under rated conditions. The MSC81010 is designed for Class C amplifier applications in the 0.4 - 1.2 GHz frequency range. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter 1. Collector 2. Base 3.