MSC81035M
DESCRIPTION
The MSC81035M is a medium power Class C transistor designed specifically for pulsed L-Band avionics applications. This device is a direct replacement for the MSC1035M. MSC81035M offers improved saturated ouput power and collector efficiency based on the test circuit described herein. Low RF thermal resistance and puterized automatic wire bonding techniques ensure high reliability and product consistency. The MSC81035M is housed in the IMPAC ™ package with internal input matching. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base
PDISS IC VCC TJ T STG
Power Dissipation- Device Current-
(TC ≤ 100°C)
150 3.0 55 250
- 65 to +200
W A V °C °C
Collector-Supply Voltage- Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance- 1.0 °C/W
- Applies only to rated RF amplifier operation Note: Thermal Resistance determined by Infra-Red Scanning of Hot-Spot...
