Datasheet Summary
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
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REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 35 W MIN. WITH 10.7 dB GAIN
.280 2LFL (S068) epoxy sealed ORDER CODE MSC81035M BRANDING 81035M
PIN CONNECTION DESCRIPTION The MSC81035M is a medium power Class C transistor designed specifically for pulsed L-Band avionics applications. This device is a direct replacement for the MSC1035M. MSC81035M offers improved saturated ouput power and collector efficiency based on the test circuit described herein. Low RF thermal...