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MSC81250M - RF & MICROWAVE TRANSISTORS

Description

The MSC81250M device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications.

This device is capable of withstanding a minimum 20:1 load VSWR at any phase angle under full rated conditions.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSC81250M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . REFRACTORYGOLD METALLIZATION RUGGEDIZED VSWR 20:1 INTERNAL INPUT/OUTPUT MATCHING LOW THERMAL RESISTANCE METAL/CERAMIC HERMETIC PACKAGE P OUT = 250 W MIN. WITH 6.2 dB GAIN .400 x .400 2NLFL (S042) hermetically sealed ORDER CODE MSC81250M BRANDING 81250M PIN CONNECTION DESCRIPTION The MSC81250M device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications. This device is capable of withstanding a minimum 20:1 load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semi automatic wire bonding techniques ensure high reliability and product consistency. The MSC81250M is housed in the unique AMPACâ„¢ package with internal input/output matching structures.
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