MSC81250M
DESCRIPTION
The MSC81250M device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications. This device is capable of withstanding a minimum 20:1 load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semi automatic wire bonding techniques ensure high reliability and product consistency. The MSC81250M is housed in the unique AMPAC™ package with internal input/output matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base
PDISS IC VCC TJ .. T STG
Power Dissipation- Device Current-
(TC ≤ 80°C)
600 17.8 55 250
- 65 to +200
W A V °C °C
Collector-Supply Voltage- Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance- 0.20 °C/W
- Applies only to rated RF amplifier operation
October 1992
1/5
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value...
