MSC81250M
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
...... REFRACTORY\GOLD METALLIZATION
RUGGEDIZED VSWR 20:1
INTERNAL INPUT/OUTPUT MATCHING
LOW THERMAL RESISTANCE
METAL/CERAMIC HERMETIC PACKAGE
POUT = 250 W MIN. WITH 6.2 dB GAIN
.400 x .400 2NLFL (S042)
hermetically sealed
ORDER CODE
MSC81250M
B RA ND IN G
81250M
PIN CONNECTION
DESCRIPTION
The MSC81250M device is a high power pulsed
transistor specifically designed for DME/TACAN
avionics applications.
This device is capable of withstanding a minimum
20:1 load VSWR at any phase angle under full
rated conditions. Low RF thermal resistance and
semi automatic wire bonding techniques ensure
high reliability and product consistency.
The MSC81250M is housed in the unique
AMPAC™ package with internal input/output
matching structures.
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
PDISS
IC
VCC
www.DataSheet4TUJ.com
TSTG
Parameter
Power Dissipation* (TC ≤ 80°C)
Device Current*
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
Value
600
17.8
55
250
− 65 to +200
Unit
W
A
V
°C
°C
0.20
°C/W
October 1992
1/5
