MSC81325M transistors equivalent, rf & microwave transistors.
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PRELIMINARY DATA
REFRACTORY/GOLD METALLIZATION EMITTER BALLASTED RUGGEDIZED VSWR ∞:1 INPUT/OUTPUT MATCH.
The MSC81325M device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications. This device is capable of withstanding an infinite load VSWR at any phase angle under full rated conditions. Low RF thermal resistance a.
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