Datasheet Details
| Part number | MSC81325M |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 88.35 KB |
| Description | RF & MICROWAVE TRANSISTORS |
| Download | MSC81325M Download (PDF) |
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Overview: MSC81325M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER BALLASTED RUGGEDIZED VSWR ∞:1 INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 325 W MIN. WITH 6.7 dB GAIN .400 x .
| Part number | MSC81325M |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 88.35 KB |
| Description | RF & MICROWAVE TRANSISTORS |
| Download | MSC81325M Download (PDF) |
|
|
|
The MSC81325M device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications.
This device is capable of withstanding an infinite load VSWR at any phase angle under full rated conditions.
Low RF thermal resistance and semiautomatic bonding techniques ensure high reliability and product consistency.
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