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MSC81325M - RF & MICROWAVE TRANSISTORS

Description

The MSC81325M device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications.

This device is capable of withstanding an infinite load VSWR at any phase angle under full rated conditions.

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Datasheet preview – MSC81325M

Datasheet Details

Part number MSC81325M
Manufacturer STMicroelectronics
File Size 88.35 KB
Description RF & MICROWAVE TRANSISTORS
Datasheet download datasheet MSC81325M Datasheet
Additional preview pages of the MSC81325M datasheet.

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Full PDF Text Transcription

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MSC81325M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER BALLASTED RUGGEDIZED VSWR ∞:1 INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 325 W MIN. WITH 6.7 dB GAIN .400 x .400 2NLFL (S042) hermetically sealed ORDER CODE MSC81325M BRANDING 81325M PIN CONNECTION DESCRIPTION The MSC81325M device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications. This device is capable of withstanding an infinite load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semiautomatic bonding techniques ensure high reliability and product consistency.
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